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Lightning In Situ TEM Biasing & Heating

Lightning Knowledge base

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In situ TEM characterization of electrical properties of semiconductor nanowires

In this work In Situ biasing TEM was used…

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– DensSolutions –

In Situ TEM study of Lithium-Ion Solid-State Battery

Safety issues associated with the flammable organic liquid electrolytes…

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In Situ TEM Solutions

Lightning | Biasing & Heating

DENSsolutions
In Situ TEM Biasing & Heating

The Lightning in situ TEM biasing and heating solution allows microscopists to observe real time dynamics of functional nanomaterials under controlled and repeatable electrical and thermal stimuli. A state-of-the-art Nano-Chip accurately controls heat and bias while collecting meaningful sample data. With the possibility to sustain the highest electrical fields and temperatures, individually or simultaneously, a wide range of phenomena now becomes accessible.

Unparalleled Capability

Achieve electric fields higher than 300 kV/cm at 900°C

Measure Sample Response

Measuring I-V response with pA current sensitivity

High Impact
Results

Minimal displacement even at ΔT = 1000°C 

Talk to an Instrumentation Specialist Today!

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Denssolution Lightning

Nano-Chip

The Lightning Nano-Chip uses the latest in MEMS technology to create the lab-on-chip. Its unique design gives microscopists accurate and repeatable control over the thermal and electrical environment, with the added possibility of measuring I-V response.

Modular and upgradable

Choose from dedicated biasing or heating chips as well as configurations for simultaneous biasing + heating.

Four-point probe mechanism

A closed 4-point probe feedback loop provides maximum versatility, accuracy, and homogeneity in controlling stimulus and measuring response. 

Compatible with a range of samples

Easily place lamellae or nanowire in the elongated window or select SiNx windows for supporting nanoparticles.

Nano-Chip Specifications
Videos & Demos

Denssolutions Lightning Videos & demos

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Additional Modular Details

Sample Holders

The sample holder brings the Nano-Chip into the TEM. Made from titanium for its optimal mechanical stability, the sample holder is carefully designed to integrate into ThermoFisher or JEOL microscopes.

  • High stability
    The Lighning holder demonstrates less than 200 nm of displacement and a short stabilization time even at temperature swings approaching 1000°C, as well as atomic resolution routinely achievable even at high electric fields.
  • Compatible with small pole-piece gaps
    The Lightning holder can fit in the smallest pole-piece gaps such as the JOEL ARM and the FEI (Thermo Fisher Scientific) Titan.
  • Large double-tilt range
    Ensure you can reach the zone axis for the sharpest image contrast with the double tilt Lightning holder. For tilt range specifications, please contact us.

FIB Stub 3.0

The 3rd generation FIB Stub enables an easier, safer, and quicker preparation of lamella. It is designed to allow the user to prepare a lamella and place it directly on the Nano-Chip, all inside the FIB-SEM.

  • Ease of use
    The sample is located on a flat surface at the top of the stub. This conventional geometry means that the same, well-known process can be used by any FIB operator to prepare the specimen.
  • Improved imaging
    Reduced shadowing and charging improves image quality, especially at low accelerating voltages during the final milling and polishing steps (1-5 kV).
  • Smart clamping
    Using the dedicated pocket for the Nano-Chips, loading and unloading becomes a precise and easy process. There is no need for sticky tapes to fix the chip on the sub, minimizing the possibility of damage to the fragile window membranes and chips during handling.
  • Safe procedure
    Design such that the position of the sample and Nano-chip are at the same height. This minimizes the possibility of crashing into the pole piece, the gas injection system, or the manipulator.

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Denssolution Lightning

Nano-Chip Specifications

ThermoFisher (FEI) compatible
Heating (4H) Biasing (4B) Heating & Biasing (4H2B) Heating & Biasing (2H4B)
Electrical contacts 4 4 6: 4 biasing, 2 heating 6: 4 heating, 2 biasing
Temperature range 1300°C NA 900°C w/ biasing
1300°C w/o biasing
Min. detectable current NA pA range
Electric field NA 300 kV/cm 300 kV/cm at 900°C
DC measurement NA 150 V 150 V at 900°C
AC measurement NA 1 – 100 Hz
Compatible systems Wildfire H+ DT, Lightning HB+ Lightning HB+
JEOL compatible
Heating (4H) Biasing (4B) Heating & Biasing (4H4B)
Electrical contacts 4 4 8: 4 heating, 4 biasing
Temperature range 1300°C NA 900°C w/ biasing
1300°C w/o biasing
Min. detectable current NA pA range
Electric field NA 300 kV/cm 300 kV/cm at 900°C
DC measurement NA 150 V 150 V at 900°C
AC measurement NA 1 – 100 Hz
Compatible systems Wildfire H+ DT, Lightning HB+ Lightning HB+

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